SIR846DP-T1-GE3
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Краткое описание:
N-CH MOSFET 100V 60A 7.8mR SOIC SM
Дополнительная информация
N-CHANNEL MOSFET, 100V Vdss, 60A continuous drain current, and 7.8mR Rds On Max at 10V. This surface mount component offers 104W maximum power dissipation and operates within a -55°C to 150°C temperature range. Features include 2.87nF input capacitance, 18ns turn-on delay, 36ns turn-off delay, and 20ns fall time. Packaged in SOIC for tape and reel distribution, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.8mR |
| Nominal Vgs | 3.5V |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.87nF |
| Threshold Voltage | 1.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 7.8mR |
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