SIR850DP-T1-GE3
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Краткое описание:
25V 30A N-CH MOSFET, 7.3mR RdsOn, SOIC, SM
Дополнительная информация
N-channel MOSFET with 25V drain-source voltage and 30A continuous drain current. Features low 7.3mΩ drain-source resistance and 1.12nF input capacitance. Operates with a 3V threshold voltage and 20V gate-source voltage. Packaged in an 8-pin SOIC PowerPAK for surface mounting, with a maximum power dissipation of 41.7W. RoHS compliant and suitable for operation between -55°C and 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89mm |
| Height | 1.04mm |
| Length | 4.9mm |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Packaging | Tape and Reel |
| Rds On Max | 7mR |
| Package/Case | SOIC |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.12nF |
| Power Dissipation | 4.8W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 41.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 25V |
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