SIR880ADP-T1-GE3
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Краткое описание:
MOSFET N-CH 80V 60A PPAK SO-8
Дополнительная информация
MOSFET N-CH 80V 60A PPAK SO-8
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.3mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.289nF |
| Threshold Voltage | 1.5V |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.3mR |
| Gate to Source Voltage (Vgs) | 3V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 8.9MR |
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