SIR882DP-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET, 100V, 60A, 8.7mR, Surface Mount
Дополнительная информация
The SIR882DP-T1-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 83W and a continuous drain current of 60A. The device has a drain to source resistance of 8.7mR and a threshold voltage of 1.2V. It is compliant with RoHS regulations and is packaged in tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Weight | 0.01787oz |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.7mR |
| Nominal Vgs | 1.2V |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.93nF |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 100V |
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