SIS402DN-T1-GE3
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Краткое описание:
N-Ch MOSFET, 30V, 6.4mR, 35A, Surface Mount
Дополнительная информация
Single N-Channel Power MOSFET featuring 30V drain-source voltage and a low 6mΩ maximum drain-source on-resistance. This surface mount component offers a continuous drain current of 35A and a maximum power dissipation of 3.8W. Operating across a wide temperature range from -55°C to 150°C, it includes fast switching characteristics with typical turn-on and turn-off delay times of 25ns. The compact PowerPAK-1212-8 package measures 3.05mm x 3.05mm x 1.04mm.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05mm |
| Height | 1.04mm |
| Length | 3.05mm |
| Series | SIS |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.7nF |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 25ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6mR |
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