SIS426DN-T1-GE3
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Краткое описание:
N-CH MOSFET 20V 35A 4.5mR 8-Pin PowerPAK
Дополнительная информация
N-channel MOSFET transistor for surface mount applications. Features 20V drain-source voltage and 35A continuous drain current. Offers low on-resistance of 4.5mR (max) and 4.6mR. Includes fast switching times with turn-on delay of 21ns and fall time of 17ns. Operates across a wide temperature range from -55°C to 150°C with 3.7W power dissipation. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.3mm |
| Length | 3.3mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 17ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.57nF |
| Power Dissipation | 3.7W |
| Threshold Voltage | 2.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 4.5mR |
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