SIS434DN-T1-GE3
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Краткое описание:
N-CH MOSFET 40V 35A 7.6mR TO-252 1.17mm
Дополнительная информация
N-channel MOSFET, 40V Drain-Source Voltage (Vdss), 35A Continuous Drain Current (ID). Features low 7.6mΩ maximum Drain-Source On-Resistance (Rds On) and 9.2mΩ Drain to Source Resistance. Operates with a 2.2V Gate to Source Voltage (Vgs) threshold. Surface mountable in a TO-252-3 package, with 52W maximum power dissipation. RoHS compliant with fast switching times including 20ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.17mm |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 7.6mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.53nF |
| Threshold Voltage | 2.2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 52W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.2mR |
| Gate to Source Voltage (Vgs) | 2.2V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 7.6mR |
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