SIS435DNT-T1-GE3
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Краткое описание:
P-CHANNEL TrenchFET MOSFET 20V 30A 5.4mR 3.7W Surface Mount
Дополнительная информация
The SIS435DNT-T1-GE3 is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 3.7W and a drain to source resistance of 5.4mR. The device is a single element, packaged in tape and reel, and is RoHS compliant. The SIS435DNT-T1-GE3 has a gate to source voltage of 8V and a drain to source voltage of 20V. It features a turn-off delay time of 100ns and a fall time of 30ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Packaging | Tape and Reel |
| Rds On Max | 5.4mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.7nF |
| Power Dissipation | 3.7W |
| Number of Elements | 1 |
| Turn-Off Delay Time | 100ns |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.4mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 20V |
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