SIS454DN-T1-GE3

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SIS454DN-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CHANNEL MOSFET 20V 35A 52W Surface Mount
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The SIS454DN-T1-GE3 is a surface mount N-CHANNEL MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 52W and a continuous drain current of 35A. The device is RoHS compliant and lead free, packaged in tape and reel with a single channel.
RoHS Compliant
Mount Surface Mount
Series TrenchFET®
Polarity N-CHANNEL
Fall Time 10ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.7mR
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 1.9nF
Threshold Voltage 1V
Number of Channels 1
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 25ns
Reach SVHC Compliant Unknown
Max Power Dissipation 52W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 3mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 35A
Drain to Source Voltage (Vdss) 20V

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