SIS478DN-T1-GE3
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Краткое описание:
N-CHANNEL TrenchFET MOSFET 30V 12A 20mR 1.2V Threshold
Дополнительная информация
The SIS478DN-T1-GE3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 15.6W and a power dissipation of 3.2W. The device is RoHS compliant and has an input capacitance of 398pF. It is a single channel device with a continuous drain current of 12A and a drain to source resistance of 16mR.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 398pF |
| Power Dissipation | 3.2W |
| Threshold Voltage | 1.2V |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 15.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
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