SIS862DN-T1-GE3
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Краткое описание:
N-CHANNEL MOSFET 60V 40A 8.5mR 52W Surface Mount
Дополнительная информация
The SIS862DN-T1-GE3 is a single N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 52W and a maximum drain to source voltage of 60V. The device features a continuous drain current of 40A and a drain to source resistance of 8.5mR. It is packaged in a small outline package and is lead free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.32nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 52W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 60V |
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