SISS23DN-T1-GE3
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Краткое описание:
P-CHANNEL TrenchFET MOSFET 27A 4.5mR 150°C
Дополнительная информация
The SISS23DN-T1-GE3 is a P-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 27A and a drain to source resistance of 4.5mR. The device is packaged in a surface mount package and is RoHS compliant. The MOSFET has a power dissipation of 4.8W and a threshold voltage of 900mV. It is a single element device with a fall time of 50ns and a turn-off delay time of 140ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| Polarity | P-CHANNEL |
| Fall Time | 50ns |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 8.84nF |
| Power Dissipation | 4.8W |
| Threshold Voltage | 900mV |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 140ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 57W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Voltage (Vdss) | -20V |
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