SIZ700DT-T1-GE3
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Краткое описание:
20V 16A N-CH MOSFET, 2-Ch, 4.7mR RdsOn, SMT
Дополнительная информация
N-channel MOSFET featuring 20V drain-source voltage and 16A continuous drain current. Offers low 4.7mΩ drain-to-source resistance and 1.3nF input capacitance. This surface-mount component operates across a -55°C to 150°C temperature range with a maximum power dissipation of 2.8W. Designed with two N-channel FETs, it boasts fast switching characteristics including a 10ns fall time and 12ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.73mm |
| Height | 0.75mm |
| Length | 6mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Tape and Reel |
| Rds On Max | 8.6mR |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 1.3nF |
| Power Dissipation | 2.8W |
| Threshold Voltage | 2.2V |
| Number of Channels | 2 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.8W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.7mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 20V |
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