SIZ720DT-T1-GE3
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Краткое описание:
2-Channel N-Channel TrenchFET MOSFET 20V 16A 48W Module
Дополнительная информация
The SIZ720DT-T1-GE3 is a 2-channel N-channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 48W and a continuous drain current of 16A. The device is packaged in a module with a surface mount configuration and is RoHS compliant. The MOSFET has an input capacitance of 825pF and a maximum Rds on of 8.7mR.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.73mm |
| Height | 0.75mm |
| Length | 6mm |
| Series | TrenchFET® |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 8.7mR |
| Nominal Vgs | 2V |
| Package/Case | Module |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 825pF |
| Power Dissipation | 4.6W |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Max Power Dissipation | 48W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 20V |
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