SIZ920DT-T1-GE3

Снят с производства
SIZ920DT-T1-GE3 - Vishay(Siliconix)
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Краткое описание: N-CH MOSFET 30V 22A/32A Dual TrenchFET PowerPAIR EP
Производитель Vishay(Siliconix)
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Power MOSFET featuring TrenchFET technology, designed for surface mount applications. This dual-configuration component offers a maximum drain-source voltage of 30V and supports continuous drain currents of 22A and 32A per channel. Housed in an 8-pin PowerPAIR EP package with dimensions of 5mm x 6mm x 0.7mm, it operates across a temperature range of -55°C to 150°C. Key electrical characteristics include low drain-source on-resistance and controlled gate charge for efficient switching.
PCB 8
ECCN EAR99
PPAP No
EU RoHS Yes
Category Power MOSFET
HTS Code 8541290095
Mounting Surface Mount
Cage Code 18612
Pin Count 8
Automotive No
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case PowerPAIR EP
AEC Qualified No
Configuration Dual
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 1.27
Package Material Plastic
Package Width (mm) 6
Process Technology TrenchFET
Package Height (mm) 0.7(Max)
Package Length (mm) 5
Seated Plane Height (mm) 0.75
Max Operating Temperature 150°C
Maximum Power Dissipation 4300@Channel 1|5200@Channel 2mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 22.3@Channel 1|60@Channel 2nC
Typical Gate Charge @ Vgs 22.3@10V|[email protected]@Channel 1|60@10V|[email protected]@Channel 2nC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Maximum Drain Source Voltage 30V
Maximum Gate Threshold Voltage 2.5@Channel 1|2.2@Channel 2V
Maximum Drain Source Resistance 7.1@10V@Channel 1|3@10V@Channel 2mOhm
Typical Input Capacitance @ Vds 1260@15V@Channel 1|3600@15V@Channel 2pF
Maximum Continuous Drain Current 22@Channel 1|32@Channel 2A

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