SMMA511DJ-T1-GE3
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Краткое описание:
VISHAY SMMA511DJ-T1-GE3 Dual MOSFET, N and P Channel, 4.5 A, 12 V, 0.033 ohm, 4.5 V, 400 mV
Дополнительная информация
VISHAY SMMA511DJ-T1-GE3 Dual MOSFET, N and P Channel, 4.5 A, 12 V, 0.033 ohm, 4.5 V, 400 mV
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | TrenchFET® |
| FET Type | N and P-Channel |
| Packaging | Tape and Reel |
| Rds On Max | 40mR |
| Nominal Vgs | 400mV |
| Package/Case | SC |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 400pF |
| Threshold Voltage | 400mV |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 6.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 12V |
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