SMP3003-DL-1E
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Краткое описание:
P-Channel MOSFET -75V, 100A, 8mR, TO-263, 90W
Дополнительная информация
P-Channel Power MOSFET featuring -75V drain-source breakdown voltage and 100A continuous drain current. Offers a low 8mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 90W. Packaged in a TO-263-3 (D2PAK) surface-mount package, this component operates within a temperature range of -55°C to 150°C. Includes a 95ns turn-on delay time and 820ns fall time, with 13.4nF input capacitance. Supplied on an 800-piece tape and reel, this RoHS compliant device is designed for efficient power switching applications.
| RoHS | Compliant |
| Width | 9.2mm |
| Height | 4.5mm |
| Length | 10mm |
| Polarity | P-CHANNEL |
| Fall Time | 820ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 800 |
| Input Capacitance | 13.4nF |
| Power Dissipation | 90W |
| Turn-On Delay Time | 95ns |
| Turn-Off Delay Time | 800ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | -75V |
| Drain to Source Breakdown Voltage | -75V |
