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Краткое описание:
30V 3.5A N-Ch MOSFET SOP 83mR
Дополнительная информация
N-Channel Power MOSFET, designed for surface mount applications in a SOP package. Features a 30V Drain to Source Breakdown Voltage (Vdss) and a continuous drain current (ID) of 3.5A. Offers a low on-resistance (Rds On Max) of 83mR at a nominal Vgs of 2.5V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Includes fast switching characteristics with a turn-on delay time of 6ns and a fall time of 4ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 4ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 83mR |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Package/Case | SOP |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 140pF |
| Power Dissipation | 2W |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 83mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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