SPA02N80C3
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Краткое описание:
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
| RoHS | Compliant |
| Series | CoolMOS™ |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2.7R |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| Current Rating | 2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 500 |
| Input Capacitance | 290pF |
| Turn-On Delay Time | 25ns |
| Dual Supply Voltage | 800V |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 42W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 2A |
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