SPA03N60C3
Снят с производства
Увеличить
Краткое описание:
600V 3.2A N-Channel MOSFET, 1.4 Ohm, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 3.2A continuous drain current. Offers 1.4 ohm drain-to-source resistance (Rds On Max) and 650V DC rated voltage. This silicon Metal-oxide Semiconductor FET is housed in a TO-220AB package, with a maximum power dissipation of 29.7W. Key switching characteristics include a 7ns turn-on delay and 12ns fall time. The component is RoHS compliant and halogen-free.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 9.45mm |
| Length | 10.36mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.4R |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| Current Rating | 3.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 500 |
| Input Capacitance | 400pF |
| Power Dissipation | 29.7W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 7ns |
| Turn-Off Delay Time | 64ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 29.7W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
