SPA04N80C3
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Краткое описание:
800V 4A N-Channel MOSFET, 1.3Ω RdsOn, TO-220
Дополнительная информация
N-channel power MOSFET featuring 800V drain-to-source breakdown voltage and 4A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 1.3 ohm Rds On and 3V threshold voltage. Designed for efficient switching, it exhibits a 25ns turn-on delay and 12ns fall time. Packaged in a TO-220AB 3-pin configuration, it operates from -55°C to 150°C with 38W maximum power dissipation. RoHS and Halogen Free compliant.
| RoHS | Compliant |
| Width | 4.85mm |
| Height | 16.15mm |
| Length | 10.65mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.3R |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 500 |
| Input Capacitance | 570pF |
| Power Dissipation | 38W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 800V |
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