SPA11N60CFD

Не рекомендуется для новых проектов
SPA11N60CFD - Infineon
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Краткое описание: 600V 11A N-Channel MOSFET TO-220 440mR
Производитель Infineon
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel power MOSFET with 600V drain-source breakdown voltage and 11A continuous drain current. Features 440mΩ drain-source resistance (Rds On Max) and 33W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a 7ns fall time. Packaged in a TO-220-3 through-hole configuration, this RoHS compliant component is designed for demanding power applications.
RoHS Compliant
Series CoolMOS™
Polarity N-CHANNEL
Fall Time 7ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 440mR
Nominal Vgs 4V
Termination Through Hole
Halogen Free Halogen Free
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 500
Input Capacitance 1.2nF
Power Dissipation 33W
Number of Elements 1
Turn-On Delay Time 34ns
Dual Supply Voltage 600V
Radiation Hardening No
Turn-Off Delay Time 43ns
Reach SVHC Compliant No
Max Power Dissipation 33W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 440mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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