SPA12N50C3
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Краткое описание:
500V 11.6A N-Channel MOSFET TO-220 380mR
Дополнительная информация
N-channel power MOSFET with 500V drain-source breakdown voltage and 11.6A continuous drain current. Features 380mΩ Rds On, 3V threshold voltage, and 1.2nF input capacitance. Operates across a -55°C to 150°C temperature range with 33W maximum power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-220-3 package and is RoHS compliant.
| RoHS | Compliant |
| Width | 4.85mm |
| Height | 9.83mm |
| Length | 10.65mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| Current Rating | 11.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 500 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 33W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 33W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Voltage (Vdss) | 560V |
| Drain to Source Breakdown Voltage | 500V |
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