SPA15N60CFDXKSA1
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
600V 13.4A N-Channel MOSFET, 330mR Rds(on), TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 13.4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 330mΩ drain-source resistance and 34W power dissipation. Designed for through-hole mounting in a TO-220-3 package, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 5ns fall time and 43ns turn-on delay.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 330mR |
| Nominal Vgs | 4V |
| Termination | Through Hole |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 1.82nF |
| Power Dissipation | 34W |
| Number of Elements | 1 |
| Turn-On Delay Time | 43ns |
| Dual Supply Voltage | 650V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 34W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 330mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13.4A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
