SPA15N65C3

Не рекомендуется для новых проектов
SPA15N65C3 - Infineon
Увеличить
Краткое описание: 650V 15A N-Channel MOSFET, 280mR Rds On, TO-220
Производитель Infineon
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-channel power MOSFET with 650V drain-source breakdown voltage and 15A continuous drain current. Features low 280mΩ on-state resistance and 34W power dissipation. Operates from -55°C to 150°C with a 20V gate-source voltage rating. Packaged in a TO-220AB through-hole configuration, this RoHS compliant component offers fast switching with a 11ns fall time.
RoHS Compliant
Series CoolMOS™
Polarity N-CHANNEL
Fall Time 11ns
Packaging Rail/Tube
Rds On Max 280mR
Nominal Vgs 3V
Termination Through Hole
Halogen Free Halogen Free
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 500
Input Capacitance 1.6nF
Power Dissipation 34W
Turn-On Delay Time 32ns
Dual Supply Voltage 650V
On-State Resistance 280mR
Turn-Off Delay Time 70ns
Reach SVHC Compliant No
Max Power Dissipation 34W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 280mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Drain to Source Voltage (Vdss) 650V
Drain to Source Breakdown Voltage 650V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.