SPA16N50C3
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
500V 16A N-Channel MOSFET, 0.28 Ohm, TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 560V drain-source voltage and 16A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 280mΩ at 10Vgs. With a maximum power dissipation of 34W and a threshold voltage of 3V, it operates across a wide temperature range from -55°C to 150°C. The component is supplied in a TO-220-3 package and is RoHS compliant.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Current | 16A |
| Voltage | 560V |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| Current Rating | 16A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 500 |
| Input Capacitance | 1.6nF |
| Power Dissipation | 34W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 34W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 560V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
