SPA20N60C3
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Краткое описание:
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
| RoHS | Compliant |
| Series | CoolMOS™ |
| Current | 207A |
| Voltage | 600V |
| Fall Time | 4.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| Current Rating | 20.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 500 |
| Input Capacitance | 2.4nF |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 67ns |
| Max Power Dissipation | 34.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20.7A |
| Drain to Source Voltage (Vdss) | 650V |
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