SPB02N60C3
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Краткое описание:
600V 1.8A N-Channel MOSFET TO-263 3R
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 1.8A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 3-ohm drain-to-source resistance. Designed for efficient switching, it exhibits a 6ns turn-on delay and 12ns fall time. Packaged in a TO-263-3 surface-mount package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 25W.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3R |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| Current Rating | 1.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1000 |
| Input Capacitance | 200pF |
| Power Dissipation | 25W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 6ns |
| Turn-Off Delay Time | 68ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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