SPB03N60C3
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Краткое описание:
600V 3.2A N-Channel MOSFET, 1.4 Ohm, TO-263
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 3.2A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1.4 ohm drain-to-source resistance (Rds On Max) and a 650V DC rated voltage. Designed for surface-mount applications, it operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 38W. Key switching characteristics include a 7ns turn-on delay and a 12ns fall time.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.4R |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| Current Rating | 3.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1 |
| Input Capacitance | 400pF |
| Power Dissipation | 38W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 7ns |
| Dual Supply Voltage | 650V |
| Turn-Off Delay Time | 64ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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