SPB04N50C3
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Краткое описание:
500V N-Channel MOSFET, 4.5A, 950mR, TO-263
Дополнительная информация
N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 4.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.95 ohm Rds On and 50W maximum power dissipation. Packaged in a TO-263-3 surface-mount plastic case, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 10ns turn-on delay and 10ns fall time.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 1 |
| Input Capacitance | 470pF |
| Power Dissipation | 50W |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 560V |
| Drain to Source Breakdown Voltage | 500V |
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