SPB04N60C3
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Краткое описание:
600V N-Channel MOSFET, 4.5A, 950mR, TO-263
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.95ohm drain-source resistance and 50W maximum power dissipation. Designed for efficient switching, it exhibits a 6ns turn-on delay and 9.5ns fall time. Packaged in a TO-263-3 surface-mount plastic package, this component is RoHS and Halogen free, with a maximum operating temperature of 150°C.
| RoHS | Compliant |
| Width | 9.45mm |
| Height | 4.57mm |
| Length | 10.31mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 9.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1 |
| Input Capacitance | 490pF |
| Power Dissipation | 50W |
| Number of Elements | 1 |
| Turn-On Delay Time | 6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 58.5ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 600V |
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