SPB04N60S5
Снят с производства
Увеличить
Краткое описание:
600V N-Channel MOSFET, 4.5A, 950mR, TO-263
Дополнительная информация
N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 4.5A Continuous Drain Current, and 0.95 ohm Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package, 50W power dissipation, and operates from -55°C to 150°C. It includes fast switching characteristics with turn-on delay of 55ns and fall time of 15ns. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| Package/Case | TO-263-3 |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 580pF |
| Power Dissipation | 50W |
| Turn-On Delay Time | 55ns |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
