SPB08P06PGATMA1
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P-Channel MOSFET, 60V, 8.8A, 300mR, TO-263
Дополнительная информация
P-channel MOSFET, 60V Drain-Source Voltage, 8.8A Continuous Drain Current, and 300mΩ Rds On. This silicon power transistor features a TO-263 package for surface mounting, with a maximum power dissipation of 42W and an operating temperature range of -55°C to 175°C. It offers fast switching characteristics with turn-on delay of 16ns and fall time of 14ns. The component is RoHS compliant and HALOGEN-FREE.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.45mm |
| Height | 4.572mm |
| Length | 10.31mm |
| Series | SIPMOS® |
| Polarity | P-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 300mR |
| Package/Case | TO-263 |
| Current Rating | -8.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1 |
| Input Capacitance | 420pF |
| Power Dissipation | 42W |
| Threshold Voltage | -3V |
| Turn-On Delay Time | 16ns |
| Turn-Off Delay Time | 48ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 42W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 300mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | -60V |
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