SPB12N50C3
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Краткое описание:
500V N-Channel MOSFET, 11.6A, 380mR, TO-263
Дополнительная информация
N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 11.6A Continuous Drain Current, and 380mΩ Rds On. This silicon, metal-oxide semiconductor FET features a 125W maximum power dissipation and operates within a -55°C to 150°C temperature range. Packaged in a TO-263-3 configuration, it offers fast switching with a 10ns turn-on delay and 8ns fall time. The component is RoHS and REACH SVHC compliant, with halogen-free materials.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 380mR |
| Nominal Vgs | 3V |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| Current Rating | 11.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 1 |
| Input Capacitance | 1.2nF |
| Power Dissipation | 125W |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Voltage (Vdss) | 560V |
| Drain to Source Breakdown Voltage | 500V |
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