SPB160N04S2-03
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N-Channel MOSFET, 40V, 160A, 2.9mR Rds(on), TO-263
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and 160A continuous drain current. This surface-mount device offers a low 2.9mΩ drain-source resistance (Rds On) and a maximum power dissipation of 300W. Operating across a wide temperature range from -55°C to 175°C, it is packaged in a TO-263-7 configuration. Key switching characteristics include a 21ns turn-on delay and a 40ns fall time.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 2.9mR |
| Package/Case | TO-263-7 |
| Current Rating | 160A |
| RoHS Compliant | No |
| DC Rated Voltage | 40V |
| Package Quantity | 1000 |
| Input Capacitance | 7.32nF |
| Power Dissipation | 300W |
| Turn-On Delay Time | 21ns |
| Turn-Off Delay Time | 61ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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