SPB16N50C3
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Краткое описание:
500V 16A N-Channel MOSFET TO-263-3 280mR
Дополнительная информация
N-Channel Power MOSFET, 500V Drain-Source Breakdown Voltage, 16A Continuous Drain Current, and 0.28 Ohm Rds On. Features include a 160W maximum power dissipation, 1.6nF input capacitance, and fast switching times with 10ns turn-on and 8ns fall times. This silicon Metal-oxide Semiconductor FET is housed in a TO-263-3 package, is RoHS and Halogen free, and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Width | 9.45mm |
| Height | 4.57mm |
| Length | 10.31mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 280mR |
| Nominal Vgs | 3V |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| Current Rating | 16A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 1 |
| Input Capacitance | 1.6nF |
| Power Dissipation | 160W |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 560V |
| Drain to Source Breakdown Voltage | 500V |
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