SPB80P06PGATMA1
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Краткое описание:
80A 60V P-Channel MOSFET, 23mR Rds(on), TO-263
Дополнительная информация
P-channel MOSFET, 60V drain-source voltage, 80A continuous drain current, and 23mΩ on-state resistance. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package, 340W power dissipation, and operates across a -55°C to 175°C temperature range. Includes 30ns fall time, 24ns turn-on delay, and 56ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 4.4mm |
| Series | SIPMOS® |
| Fall Time | 30ns |
| Lead Free | Contains Lead |
| Packaging | Cut Tape |
| Rds On Max | 23mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-263-3 |
| Current Rating | -80A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1000 |
| Input Capacitance | 5.033nF |
| Power Dissipation | 340W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Turn-On Delay Time | 24ns |
| On-State Resistance | 23mR |
| Turn-Off Delay Time | 56ns |
| Max Power Dissipation | 340W |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 21mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain to Source Breakdown Voltage | -60V |
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