SPD02N60S5
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Краткое описание:
600V 1.8A N-Channel MOSFET, 3 Ohm RdsOn, TO-252
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 1.8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 3-ohm drain-source resistance and 25W power dissipation. Designed for surface-mount applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-252AA (DPAK) plastic housing. Key electrical characteristics include a 20V maximum gate-to-source voltage and 4.5V threshold voltage.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.3mm |
| Length | 6.5mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3R |
| Nominal Vgs | 4.5V |
| Termination | SMD/SMT |
| Package/Case | TO-252-3 |
| Current Rating | 1.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 240pF |
| Power Dissipation | 25W |
| Threshold Voltage | 4.5V |
| Turn-On Delay Time | 35ns |
| Dual Supply Voltage | 600V |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.8A |
| Drain to Source Breakdown Voltage | 600V |
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