SPD03N50C3
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Краткое описание:
500V 3.2A N-Channel MOSFET, 1.4 Ohm, TO-252
Дополнительная информация
N-channel power MOSFET featuring 500V drain-to-source breakdown voltage and 3.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.4 ohm Rds On resistance and 38W maximum power dissipation. Designed for efficient switching, it exhibits a 10ns turn-on delay and 15ns fall time. Packaged in a TO-252AA (DPAK-3) plastic housing, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.41mm |
| Length | 6.73mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.4R |
| Package/Case | TO-252-3 |
| Current Rating | 3.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Power Dissipation | 38W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 10ns |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.4R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Breakdown Voltage | 500V |
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