SPD04N60S5
Снят с производства
Увеличить
Краткое описание:
600V 4.5A N-CH MOSFET, 950mR, TO-252
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.95ohm drain-source resistance (Rds On Max) and 50W power dissipation. Designed for efficient switching, it exhibits turn-on delay time of 55ns and fall time of 15ns. Packaged in a TO-252AA (DPAK-3) surface-mount plastic package, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| Package/Case | TO-252-3 |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 580pF |
| Power Dissipation | 50W |
| Turn-On Delay Time | 55ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 950mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
