SPD04P10PLG
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Краткое описание:
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, 3 PIN
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.41mm |
| Length | 6.73mm |
| Series | SIPMOS® |
| Packaging | Tape and Reel |
| Rds On Max | 850mR |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 372pF |
| Turn-On Delay Time | 4.6ns |
| Turn-Off Delay Time | 18ns |
| Max Power Dissipation | 38W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.2A |
