SPD04P10PLGBTMA1
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Краткое описание:
P-Channel MOSFET, 100V, 4.2A, 850mR, TO-252
Дополнительная информация
P-channel MOSFET, 100V drain-source breakdown voltage, 4.2A continuous drain current, and 0.85 ohm on-state resistance. This silicon metal-oxide semiconductor FET features a TO-252-3 package for surface mounting, a maximum power dissipation of 38W, and an operating temperature range of -55°C to 175°C. Key electrical characteristics include a gate-source voltage of 20V, a threshold voltage of -1.5V, and input capacitance of 372pF. Switching performance is demonstrated by a 4.6ns turn-on delay and 18ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 2.35mm |
| Series | SIPMOS® |
| Fall Time | 5ns |
| Lead Free | Contains Lead |
| Packaging | Cut Tape |
| Rds On Max | 850mR |
| Halogen Free | Not Halogen Free |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 372pF |
| Threshold Voltage | -1.5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 4.6ns |
| On-State Resistance | 850mR |
| Turn-Off Delay Time | 18ns |
| Max Power Dissipation | 38W |
| Max Dual Supply Voltage | -100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 787mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | -100V |
| Drain to Source Breakdown Voltage | -100V |
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