SPD07N60S5
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Краткое описание:
600V 7.3A N-Channel MOSFET, 600mR Rds(on), TO-252
Дополнительная информация
N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 7.3A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.6 ohm Rds On resistance and 83W maximum power dissipation. Designed for surface-mount applications with a TO-252AA package, it operates from -55°C to 150°C. Key electrical characteristics include 970pF input capacitance and a nominal Vgs of 4.5V.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Packaging | Tape and Reel |
| Rds On Max | 600mR |
| Nominal Vgs | 4.5V |
| Termination | SMD/SMT |
| Halogen Free | Not Halogen Free |
| Package/Case | TO-252-3 |
| Current Rating | 7.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1 |
| Input Capacitance | 970pF |
| Power Dissipation | 83W |
| Dual Supply Voltage | 600V |
| Turn-Off Delay Time | 170ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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