SPD08N50C3
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Краткое описание:
500V 7.6A N-Channel MOSFET, 600mR, TO-252
Дополнительная информация
N-Channel Power MOSFET, 500V Vds, 7.6A Continuous Drain Current, 600mΩ Rds On. This silicon metal-oxide semiconductor field-effect transistor features a TO-252 package for surface mounting, with a maximum power dissipation of 83W and an operating temperature range of -55°C to 150°C. Key switching characteristics include a 6ns turn-on delay and 7ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.41mm |
| Length | 6.73mm |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 600mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Halogen Free | Not Halogen Free |
| Package/Case | TO-252 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 750pF |
| Power Dissipation | 83W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 560V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 83W |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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