SPD08P06P
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Краткое описание:
P-Channel MOSFET, 60V, 8.83A, 300mR, TO-252, SMD
Дополнительная информация
P-channel power MOSFET with 60V drain-source voltage and 8.83A continuous drain current. Features low on-resistance of 300mΩ at a nominal gate-source voltage of 20V. This surface-mount device, packaged in TO-252, offers a maximum power dissipation of 42W and operates across a temperature range of -55°C to 175°C. Includes 420pF input capacitance and fast switching times with 16ns turn-on and 48ns turn-off delays. RoHS compliant and designed for efficient power management applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.3mm |
| Length | 6.5mm |
| Series | SIPMOS® |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 300mR |
| Nominal Vgs | 20V |
| Termination | SMD/SMT |
| Package/Case | TO-252-3 |
| Current Rating | -8.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Input Capacitance | 420pF |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | -60V |
| Turn-Off Delay Time | 48ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 42W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.83A |
| Drain to Source Voltage (Vdss) | 60V |
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