SPD08P06PGBTMA1
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Краткое описание:
P-Channel MOSFET, 60V, 8.8A, 300mR, TO-252
Дополнительная информация
P-channel MOSFET with 60V drain-source breakdown voltage and 8.83A continuous drain current. Features 300mΩ maximum on-state resistance and 42W power dissipation. Operates from -55°C to 175°C, with a 20V gate-source voltage rating. Packaged in a TO-252 surface-mount case, this RoHS compliant component is supplied on tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 2.5mm |
| Series | SIPMOS® |
| Fall Time | 14ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 300mR |
| Halogen Free | Not Halogen Free |
| Package/Case | TO-252-3 |
| Current Rating | -8.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 2500 |
| Input Capacitance | 420pF |
| Power Dissipation | 42W |
| Threshold Voltage | -3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| On-State Resistance | 300mR |
| Turn-Off Delay Time | 48ns |
| Max Power Dissipation | 42W |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 230mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8.83A |
| Drain to Source Voltage (Vdss) | -60V |
| Drain to Source Breakdown Voltage | -60V |
