SPD15P10PGBTMA1

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SPD15P10PGBTMA1 - Infineon
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Краткое описание: 15A 160mR Drain to Source Resistance P-Channel MOSFET
Производитель Infineon
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

The SPD15P10PGBTMA1 is a P-channel MOSFET from Infineon with a maximum drain current of 15A and a drain to source resistance of 160mR. It has a maximum operating temperature range of -55°C to 175°C and is packaged in a TO-252-3 surface mount package. The device is RoHS compliant and has a maximum power dissipation of 128W. It is not halogen free and contains lead. The MOSFET is part of the SIPMOS series and is compliant with AEC-Q101.
RoHS Compliant
Mount Surface Mount
Series Automotive, AEC-Q101, SIPMOS®
Fall Time 16ns
Lead Free Contains Lead
Packaging Cut Tape
Rds On Max 240mR
Halogen Free Not Halogen Free
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 1.28nF
Turn-On Delay Time 9.5ns
On-State Resistance 240mR
Turn-Off Delay Time 33ns
Max Power Dissipation 128W
Max Dual Supply Voltage -100V
Max Operating Temperature -55°C
Min Operating Temperature 175°C
Drain to Source Resistance 160mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Drain to Source Voltage (Vdss) -100V

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