SPD18P06P
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Краткое описание:
P-Channel MOSFET, 60V, 18.6A, 130mR, TO-252
Дополнительная информация
P-channel power MOSFET featuring 60V drain-source voltage and 18.6A continuous drain current. This surface-mount device offers a low 0.13-ohm Rds On resistance at a nominal 20V gate-source voltage. Operating across a wide temperature range of -55°C to 175°C, it supports up to 80W of power dissipation. The component is packaged in a TO-252-3 case with 3 pins and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.3mm |
| Length | 6.5mm |
| Series | SIPMOS® |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rds On Max | 130mR |
| Nominal Vgs | 20V |
| Termination | SMD/SMT |
| Package/Case | TO-252-3 |
| Current Rating | -18.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Input Capacitance | 860pF |
| Threshold Voltage | 20V |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | -60V |
| Turn-Off Delay Time | 24.5ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 18.6A |
| Drain to Source Voltage (Vdss) | 60V |
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