SPI08N50C3
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Краткое описание:
500V 7.6A N-Channel MOSFET TO-262 600mR
Дополнительная информация
N-Channel Power MOSFET featuring 500V Drain-Source Voltage (Vdss) and 7.6A Continuous Drain Current (ID). This silicon, metal-oxide semiconductor FET offers a low 600mR Drain-Source On-Resistance (Rds On Max) and 83W Power Dissipation. Designed with a TO-262-3 package, it boasts fast switching characteristics with a 6ns Turn-On Delay Time and 7ns Fall Time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is ideal for power switching applications.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 600mR |
| Package/Case | TO-262-3 |
| Current Rating | 7.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 560V |
| Package Quantity | 500 |
| Input Capacitance | 750pF |
| Power Dissipation | 83W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 6ns |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 83W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 600mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 560V |
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