SPI08N80C3
Снят с производства
Увеличить
Краткое описание:
800V 8A N-Channel MOSFET, 650mR Rds On, TO-262
Дополнительная информация
N-Channel Power MOSFET, 800V Drain to Source Breakdown Voltage, 8A Continuous Drain Current. Features 650mΩ Rds On, 104W Max Power Dissipation, and 1.1nF Input Capacitance. Operates from -55°C to 150°C with fast switching speeds including 7ns Fall Time, 25ns Turn-On Delay, and 65ns Turn-Off Delay. Packaged in TO-262-3, this silicon Metal-oxide Semiconductor FET is ROHS and Halogen Free compliant.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 650mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-262-3 |
| Current Rating | 8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 500 |
| Input Capacitance | 1.1nF |
| Power Dissipation | 104W |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 104W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 650mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
